A Product Line of
Diodes Incorporated
DMP4051LK3
Typical Characteristics
10
T = 25°C
10V
4V
3.5V
3V
10
T = 150°C
10V
4V
3.5V
3V
2.5V
1
2.5V
1
2V
0.1
0.01
-V GS
0.1
0.01
-V GS
0.1
1
10
0.1
1
10
-V DS Drain-Source Voltage (V)
Output Characteristics
-V DS Drain-Source Voltage (V)
Output Characteristics
10
-V DS = 10V
1.6
1.4
V GS = -10V
I D = -12A
R DS(on)
1.2
1
T = 150°C
T = 25°C
1.0
0.8
V GS = V DS
V GS(th)
I D = -250uA
0.1
0.6
1.5
2.0
2.5
3.0
3.5
-50
0
50
100
150
-V GS Gate-Source Voltage (V)
Typical Transfer Characteristics
Tj Junction Temperature (°C)
Normalised Curves v Temperature
-V GS
2.5V
T = 25°C
10
3V
1
3.5V
4V
1
T = 150°C
T = 25°C
0.1
0.1
4.5V
10V
0.01
0.01
0.01 0.1 1 10
-I D Drain Current (A)
On-Resistance v Drain Current
DMP4051LK3
Document Number DS32114 Rev. 3 - 2
1E-3
0.2 0.4 0.6 0.8 1.0
-V SD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
5 of 9
www.diodes.com
1.2
February 2012
? Diodes Incorporated
相关PDF资料
DMP57D5UFB-7 MOSFET P-CH 50V 200MA 3-DFN
DMP58D0LFB-7B MOSFET P-CH 50V 180MA 3-DFN
DMP58D0SV-7 MOSFET P-CH 50V 160MA SOT-563
DMS2120LFWB-7 MOSFET P-CH 20V 2.9A 8DFN
DMS2220LFDB-7 MOSFET P-CH 20V 3.5A 6-DFN
DMS2220LFW-7 MOSFET P-CH 20V 2.9A 8-DFN
DMS3012SFG-7 MOSFET N CH 30V POWERDI 3333-8
DMS3014SFG-7 MOSF N CH 30V 9.5A POWERDI3333-8
相关代理商/技术参数
DMP5530 制造商:TAPESWITCH CORP 功能描述:Mat, Safety, Diamond Plate Aluminum, 55X30
DMP56D0UV-7 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 41V-60V SOT563 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSF P CH 50V 160MA SOT563
DMP57D5UFB 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP57D5UFB-7 功能描述:MOSFET PMOS-SINGLE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP57D5UV 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
DMP57D5UV-7 功能描述:MOSFET 50V PMOS-DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP58D0LFB 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP58D0LFB-7 功能描述:MOSFET MOSFET BVDSS: 41V-60 X1-DFN1006-3 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube